温鹏雁

当前位置：首页师资队伍副教授

师资队伍

温鹏雁

发布时间：2023-03-22 浏览次数：3005

姓名：温鹏雁

职称：副教授

学科：电子科学与技术

专业：微电子学与固体电子学

导师类型：博导/硕导

电子邮件：pywen@tongji.edu.cn

通信地址：上海市嘉定区曹安公路4800号电信学院（智信馆）724b室

个人简介：

温鹏雁，长聘副教授，博士生导师，入选国家级高层次青年人才，上海市领军人才（海外），同济大学青百A岗。2016年获得中国科学院大学微电子学与固体电子学博士学位。随后在中国科学院苏州纳米技术与纳米仿生研究所、瑞士IBM苏黎世研发中心工作。2023年3月起任同济大学电子与信息工程学院电子科学与技术系副教授。

研究方向：面向光通信芯片的光电子器件与高效集成技术（硅基III-V激光器、光电探测器、新型光电子器件等）。

招收博士生、硕士生、博士后及科研助理。欢迎对本课题组研究方向感兴趣的学生、学者加入。

获奖情况：

欧盟玛丽居里学者（2020）

支持“率先行动”优秀博士后（2016）

中国科学院大学优秀毕业生（2016）

科研项目：

1. H2020 欧盟玛丽居里项目，Defect analysis and thermal effects of nanolasers and Emitters， 20.3 万欧元 (No. 844541)，结题, 主持。

2. 国家重点研发计划课题，三基色LD在线检测和老化筛选技术， 460万元，（No. 2018YFB0406905），结题, 主持。

3. 国家青年科学基金，GaN基激光器有源区退化与应力诱导缺陷的研究， 25 万元，（No. 61704184），结题, 主持。

4. 江苏省青年科学基金，GaN-LDs有源区退化与应力诱导缺陷的研究， 20万元，（No. BK20170430），结题, 主持。

5. 支持“率先行动”联合资助优秀博士后项目，大功率GaN基激光器可靠性研究， 20万元，（No. 2016LH0026），结题, 主持。

社会兼职：

Optical and Quantum Electronics 客座编辑

国际会议IEDM、NUSOD Committee member

Optics Express, OSA Continuum 等期刊审稿人

发表论文：

[1] P. Wen, P. Tiwari, S. Mauthe, H. Schmid, M. Sousa, M. Scherrer, M. Baumann, B. I. Bitachon, J. Leuthold, B. Gotsmann and K. E. Moselund, Waveguide coupled III-V photodiodes monolithically integrated on Si, Nature Communications, 13, 909, 2022.

[2] P. Wen, P. Tiwari, M. Scherrer, E. Lorster, B. Gotsmann and K. E. Moselund, Thermal simulation and experimental analysis of InP-on-Si micro- and nanocavity lasers, ACS Photonics, 9, 1338-48, 2022.

[3] Q. Ding, P. Wen, B. Gotsmann, K. E. Moselund and A. Schenk, Self-heating analysis of monolithically integrated hybrid III-V/Si PIN diode, SPIE Photonics Europe, Strasbourg, France,12148, 12148OE, 2022.

[4] P. Xu, H. Xiu, L. Yin, P. Wen, Y. Xue and J. Yang, The effect of humidity on the degradation mechanisms of GaN-based green laser diodes, Optics & Laser Technology, 157, 108662, 2022.

[5] P. Wen, P. Tiwari, K. E. Moselund and B. Gotsmann, Thermal and optical simulation of InP on Si nanocavity lasers, 21st International Conference on Numerical simulation of Optoelectronic Devices (NUSOD), 52207, 9541426, 2021.

[6] P. Wen, P. Tiwari, B. Gotsmann and K. E. Moselund, Modelling of thermal effects in InP-on-Si nanocavity lasers, IEEE 17^th International Conference on Group IV Photonics(GFP), 51802, 9673942, 2021.

[7] P. Tiwari, P. Wen, D. Caimi, S. Mauthe, N. V. Trivino, M. Sousa and K. E. Moselund, Scaling of Metal-Clad InP Nanodisk Lasers: Optical Performance and Thermal Effects, Optics Express, 29, 3915-27, 2021.

[8] P. Tiwari, P. Wen, S. Mauthe, M. Baumann, B. I. Bitachon, H. Schmid, J. Leuthold and K. E. Moselund, Butt-Coupled III-V Photodetector Monolithically Integrated on SOI with data reception at 50 Gbps OOK, Optical Fiber Communications Conference and Exhibition(OFC), 9490006, 2021.

[9] M. Scherrer, P. Tiwari, N. V. Trivino, S. Mauthe, P. Wen, H. Schmid and K. E. Moselund, Monolithic integration of in-plane hybrid III-V/Si photonic devices, MikroSystemTechnik, Congress, 2021.

[10] H. Xiu, P. Xu, P. Wen, Y. Zhang and J. Yang, Rapid degradation of InGaN/GaN green laser diodes, Superlattices and Microstructures, 142, 106517, 2020.

[11] Y. Tang, M. Feng, P. Wen, J. Liu, J. Wang, X, Sun, Q. Sun, S. Zhang, X. Sheng, M. Ikeda and H. Yang, Degradation study of InGaN-based laser diodes grown on Si, Journal of Physics D: Applied Physics, 53, 39, 2020.

[12] H. Lin, D. Li, L, Zhang, P. Wen, S. Zhang, J. Liu and H. Yang, Effect of microstructure of Au80Sn20 solder on the thermal resistance TO56 packaged GaN-based laser diodes, Journal of Semiconductors, 41, 102104, 2020.

[13] P. Tiwari, S. Mauthe, N. V. Triviño, P. Wen, Y. Baumgartner, M. Scherrer, D. Caimi, S. Reidt and K. E. Moselund, Metal-Clad InP Cavities for Nanolasers on Si, IEEE Photonics Conference (IPC), 47351, 9252274, 2020.

[14] N. Vico Triviño, S. Mauthe, M. Scherrer, P. Tiwari, P. Wen, M. Sousa, H. Schmid and K. E. Moselund, In-plane monolithic integration of scaled III-V photonic devices, European Conference on Optical Communications (ECOC), 48923, 9333303, 2020.

[15] P. Tiwari, S. Mauthe, N. V. Trivino, P. Staudinger, M. Scherrer, P. Wen, D. Caimi, M. Sousa, H. Schmid and K. E. Moselund, Q. Ding and A. Schenk, Scaled III-V optoelectronic devices on silicon, International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD), 49422, 9217747, 2020.

[16] P. Wen, H. Xiu, S. Zhang, J. Liu, L. Zhang, A. Tian, F. Zhang, R. Zhou, D. Li, M. Ikeda, W. Zhou and H. Yang, Strain-related degradation of GaN-based blue laser diodes, IEEE Journal of Selected Topics in Quantum Electronics, 25, 2947602, 2019.

[17] R. Zhou, M. Ikeda, F. Zhang, J. Liu, S. Zhang, A. Tian, P. Wen, D. Li, L. Zhang and H. Yang. Total-InGaN-thickness dependent Shockley-Read-Hall recombination lifetime in InGaN quantum wells, Japanese Journal of Applied Physics, 127, 013103, 2019.

[18] F. Zhang, M. Ikeda, R. Zhou, J. Liu, S. Zhang, A. Tian, P. Wen, D. Li, L. Zhang and H. Yang, Polarization relaxation in InGaN/(In)GaN multiple quantum wells, Japanese Journal of Applied Physics, 58, SCCB12, 2019.

[19] R. Zhou, M. Ikeda, F. Zhang, J. Liu, S. Zhang, A. Tian, P. Wen, D. Li, L. Zhang and H. Yang, Steady-state recombination lifetimes in polar InGaN/GaN quantum wells by time-resolved photoluminescence, Japanese Journal of Applied Physics, 58, SCCB07, 2019.

[20] M. Ikeda, F. Zhang, R. Zhou, J. Liu, S. Zhang, A. Tian, P. Wen, L. Zhang, D. Li and H. Yang, Thermionic emission of carriers in InGaN/(In)GaN multiple quantum wells, Japanese Journal of Applied Physics, 58, SCCB03, 2019.

[21] J. Hu, S. Zhang, D. Li, F. Zhang, M. Feng, P. Wen, J. Liu, L. Zhang and H. Yang, Thermal analysis of GaN-based laser diode mini-array, Chinese Physics B, 27, 094208, 2018.

[22] P. Wen, J. Liu, S. Zhang, L. Zhang, M. Ikeda, D. Li, A. Tian, F. Zhang, Y. Cheng, W. Zhou and H. Yang, Asymmetrical quantum well degradation of InGaN/GaN blue laser diodes characterized by photoluminescence, Applied Physics Letters, 111, 212102, 2017.

[23] F. Zhang, M. Ikeda, S. Zhang, J. Liu, A. Tian, P. Wen, Y. Cheng and H. Yang, Thermal etching rate of GaN during MOCVD growth interruption in hydrogen and ammonia ambient determined by AlGaN/GaN superlattice structures, Journal of Crystal Growth, 475, 93-9, 2017.

[24] A. Tian, J. Liu, L. Zhang, L. Jiang, M. Ikeda, S. Zhang, D. Li, P. Wen, Y. Cheng, X. Fan and H. Yang, Significant increase of quantum efficiency of green InGaN quantum well by realizing step-flow growth, Applied Physics Letters, 111, 112102, 2017.

[25] A. Tian, J. Liu, L. Zhang, Z. Li, M. Ikeda, S. Zhang, D. Li, P. Wen, F. Zhang, Y. Cheng, X. Fan and H. Yang, Green laser diodes with low threshold current density via interface engineering of InGaN/GaN quantum well active region, Optics Express, 25, 415, 2017.

[26] X. Fan, J. Liu, F. Zhang, M. Ikeda, D. Li, S. Zhang, L. Zhang, A. Tian, P. Wen, G. Ma and H. Yang, Effect of droop phenomenon in InGaN/GaN blue laser diodes on threshold current, Chinese Physics Letters, 34, 109-11, 2017.

[27] Y. Cheng, J. Liu, L. Zhang, D. Jiang, A. Tian, F. Zhang, M. Feng, P. Wen, W. Zhou, S. Zhang, M. Ikeda, D. Li and H. Yang, Suppression of recombination in waveguide in c-plane InGaN-based green laser diodes, Superlattices and Microstructures, 111, 1121-5, 2017.

[28] P. Wen, S. Zhang, J. Liu, D. Li, L. Zhang, Q. Sun, A. Tian, K. Zhou, T. Zhou and H. Yang, Investigation of InGaN/GaN laser degradation based on luminescence properties, Journal of Applied Physics, 119, 213107, 2016.

[29] P. Wen, S. Zhang, J. Liu, D. Li, L. Zhang, K. Zhou, X. Su, A. Tian, F. Zhang and H. Yang, Catastrophic degradation of InGaN/GaN blue laser diodes, IEEE Transactions on Device and Materials Reliability, 16, 638-41, 2016.

[30] P. Wen, S. Zhang, D. Li, J. Liu, L. Zhang, D. Shi, K. Zhou, A. Tian, S. Feng and H. Yang, Investigation of rapid degradation in GaN-based blue laser diodes, Superlattices and Microstructures, 99, 72-6, 2016.

[31] Y. Huang, P. Wen, D. Li, J. Liu, S. Zhang, L. Zhang and H. Yang, Investigation of output nonlinearity mechanisms in GaN-based blue laser diodes, 13th China International Forum on Solid State Lighting, 978, 16579860, 2016.

[32] F. Zhang, M. Ikeda, S. Zhang, J. Liu, A. Tian, P. Wen, Y. Cheng and H. Yang, Reduction of polarization field strength in fully strained c-plane InGaN/(In)GaN multiple quantum wells grown by MOCVD, Nanoscale Research Letters, 11, 519, 2016.

[33] A. Tian, J. Liu, L. Zhang, M. Ikeda, X. Fan, S. Zhang, D. Li, F. Zhang, P. Wen, Y. Cheng and H. Yang, Optical characterization of InGaN/GaN quantum well active region of green laser diodes, Applied Physics Express, 10, 012701, 2016.

[34] A. Tian, J. Liu, L. Zhang, M. Ikeda, S. Zhang, D. Li, X. Fan, K. Zhou, P. Wen, F. Zhang and H. Yang, Green laser diodes with low operation voltage obtained by suppressing carbon impurity in AlGaN : Mg cladding layer, Physics Status Solidi C, 13, 245-7, 2016.

[35] P. Wen, D. Li, S. Zhang, J. Liu, L. Zhang, K. Zhou, M. Feng, A. Tian, F. Zhang, C. Zeng and H. Yang, Identification of degradation mechanisms based on thermal characteristics of InGaN/GaN laser diodes, IEEE Journal of Selected Topics in Quantum Electronics, 21, 165-70, 2015.

[36] P. Wen, S. Zhang, D. Li, J. Liu, L. Zhang, D. Shi, K. Zhou, A. Tian, S. Feng and H. Yang, Identification of degradation mechanisms of blue InGaN/GaN laser diodes, Journal of Physics D: Applied Physics, 48, 415101, 2015.

[37] P. Wen, D. Li, S. Zhang, J. Liu, L. Zhang, K. Zhou, M. Feng, Z. Li, A. Tian and H. Yang, Enhanced temperature characteristic of InGaN/GaN laser diodes with uniform multiple quantum wells, Semiconductor Science and Technology, 30, 125015, 2015.

[38] P. Wen, D. Li, S. Zhang, J. Liu, L. Zhang, K. Zhou, M. Feng, Z. Li, A. Tian and H. Yang, High accuracy thermal resistance measurement in GaN/InGaN laser diodes, Solid-State Electronics, 106, 50-3, 2015.

[39] D. Shi, S. Feng, Y. Qiao and P. Wen, The research on temperature distribution of GaN-based blue laser diode, Solid-State Electronics, 109, 25-8, 2015.

[40] A. Tian, J. Liu, M. Ikeda, S. Zhang, Z. Li, M. Feng, K. Zhou, D. Li, L. Zhang, P. Wen, F. Zhang and H. Yang, Conductivity enhancement in AlGaN: Mg by suppressing the incorporation of carbon impurity, Applied Physics Express, 8, 051001, 2015.

[41] K. Zhou, M. Ikeda, J. Liu, S. Zhang, Z. Li, M. Feng, A. Tian, P. Wen, D. Li, L. Zhang and H. Yang, Abnormal InGaN growth behavior in indium-desorption regime in metalorganic chemical vapor deposition, Journal of Crystal Growth, 409, 51-5, 2015.